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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
S2000
DESCRIPTION *With TO-3PH package *High voltage ,high speed *Low collector saturation voltage APPLICATIONS *Color TV horizontal output applications *Color TV switching regulator applications PINNING(See Fig.2).
PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PH) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 700 5 8 15 4 125 150 -55~150 UNIT V V V A A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
S2000
SYMBOL
MAX
UNIT
VCEO(SUS) V(BR)EBO
Collector-emitter sustaining voltage
IB=500mA ;VBE=-1.7V;L=40mH IE=1mA ;IC=0 IC=4.5A ;IB=1.0A IC=4.5A ;IB=1.0A VCB=1500V; VBE=0 IC=1A ; VCE=5V IC=4.5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.1A ; VCE=10V
700
V
Emitter-base breakdown voltage
5
V
VCE(sat) VBE(sat) ICBO hFE-1 hFE-2 COB fT
Collector-emitter saturation voltage
5.0
V
Base-emitter saturation voltage
1.2
V
Collector cut-off current
1
mA
DC current gain
10
30
DC current gain
4.5
9
Collector output capacitance
95
pF
Transition frequency
2
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
S2000
Fig.2 outline dimensions
3


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